wafer scale implementation of gate tunable graphene schottky diode
Journal
Science
Date
2012.06.01
Abstract
Applying graphene‘s unique semi-metallic properties, we realize the gate tunable Schottky diode
on
a 150 mm wafer scale, and the measured remarkable Ion/Ioff (~ 10^5), due to the switching
mechanism being based on Schottky barrier control, is expected to allow for high performance and
high density logic devices. The height of the Schottky barrier formed between graphene-silicon is
electrically controlled in the absence of ‘Fermi-level pinning’ at the interface. The gate
adjustable diode current enables switching operation of GSD with high Ion/Ioff due to a wide range
of controlling the diode turn-on voltage. As proof of concept we also demonstrate inverter logic
circuits using the graphene Schottky diode arrays.