Samsung Advanced Institute of Technology

The emergence of artificial intelligence (AI), big data processing, and electrical vehicle technologies necessitates a new approach to address the scaling, power efficiency and performance challenges of Silicon (Si)-based technology beyond Moore's law. As a complementary technology, wide bandgap semiconductors, including GaN and SiC have attracted great attention due to their unique features of high carrier mobility and high breakdown voltages. However, there are still challenges for widespread applications of wide bandgap semiconductors including scalability, high production cost and thermal management etc. To overcome these barriers, remote epitaxy, and 2-dimensional layer transfer (2DLT) technology have been introduced and are in the process of being industrialized to produce the single crystalline semiconductors based freestanding membranes. In this perspective, we present the status and challenges for manufacturing GaN and SiC membranes based on remote epitaxy technology that offers significant advantages via wafer reuse and high-quality freestanding epilayer production. Industrialization of advanced membrane technology will be the cornerstone for numerous applications, including heterogeneously integrated circuits (ICs), power, and radio frequency (RF) systems.