Control of dielectric surface energy by dry surface treatment for high performance organic thin film transistor based on dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene semiconductor
Journal
AIP Advances
Date
2020.02.18
Abstract
We studied organic thin film transistors using vacuum deposited para-sexiphenyl (p-6P) as a sublayer for reducing the surface energy of the dielectric material. The correlation between the growth mode of the organic semiconductor dibenzothiopheno [6,5-b:6’,5’-f]thieno[3,2-b]thiophene (DBTTT) thin film and the number of the p-6P sublayers could be explained by the surface energy difference induced by molecular orientation changes in p-6P layer. A local surface energy difference is confirmed by measuring the adhesion force with nano-mechanical force measurement method.