Area-selective atomic layer deposition of MoS2 using simultaneous deposition and etching characteristics of MoCl5
- Journal
- Physica Status Solidi (RRL) - Rapid Research Letters
- Date
- 2021.01.16
- Abstract
We propose a novel selective atomic layer deposition (ALD) process for depositing MoS2 using MoCl5 and H2S precursors. On the SiO2 surface, the prolonged introduction of MoCl5 vapor by increasing the MoCl5 pulsing time rapidly suppressed the subsequent MoS2 growth owing to the intense self-etching effect of MoCl5, that is, the detachment of weakly bonded surface adsorbates (MoClx*). In contrast, the Al surface allowed stronger adsorption of MoCl5 than in case of the SiO2 surface, and thus, effectively compensated for the reduced deposition rate. By optimizing the MoCl5 pulsing time, we demonstrated the self-aligned growth of MoS2 on pre-defined Al (5 nm) patterns (circular and letter patterns) on a SiO2 substrate with a negligible selectivity loss. Moreover, it was found that area-selective deposition could be maintained up to 400 ALD cycles.
- Reference
- Phys. Status Solidi RRL 2021, 2000533