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Changing the World through Creative Research

Nano Electronics

Today‘s technology requires creative and innovative ways to overcome the technical limits posed by the working principles of classical electronic devices. SAIT is pursuing to realize new concept devices and materials to secure the position as the world top leader in semiconductor industry.

Nano Fabrication

New Materials with State-of-the-art Micro-fabrication Techniques

Dielectric thin film High-permittivity oxide thin film is known to be useful for optical applications as well as for electronics. Certain properties such high-index, low-loss as well as low-resistance from visible to near IR wavelengths are required for optical dielectric materials, especially for nanophotonic applications. Advancement in developing electrical materials has contributed in improving the performance of devices such as DRAM, CMOS image sensors, and new memories. With exceptionally delicate deposition methods, high throughput combinatorial science allows innovations in high-k dielectrics, ferroelectrics and switching materials throughout the platform.


Nano Patterning Nanoscale structuring technologies are currently approaching sub-10nm and 3D hierarchical patterning. Fine resist patterns are defined by the direct electron beam lithography, a maskless method for fast prototyping. Pulsed plasma etching is studied to overcome the limitation of nanoscale etching, combined with direct lithography. HAR (High Aspect Ratio) nanostructures in the visible range applications are developed for functional optical elements of newly devised metasurfaces, consisting of subwavelength spaced phase shifters. In addition to nanoscale plasma etching, dielectric damascene is studied for extreme defining of HAR structures using seamless ALD (Atomic Layer Deposition).


FAB infrastructure In Nano Fab center, we investigate a wide range of substrate materials (i.e., Si, glass, GaN, Polymers etc.) and fabrication technologies of Memory, Logic, Nanophotonics, TFT, OLED, μ-LED and MEMS. A variety of state-of-the-art equipment including MBE (Molecular-Beam Epitaxy), PLD (Pulsed Laser Deposition), ALD (Atomic Layer Deposition), EBL (E-Beam Lithography) and Pulsed Plasma Etcher enables the preparation of multiple-element thin films in various compositional ratios, crystallographic orientations and sophisticated series of nanoscale structures, which allows investigating their individual characteristics for better device performances. We seek to pioneer a new era of photonics and electronics research and development with our contribution in material and device studies with fully supportive nanofabrication infra-structures.