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Research Infra

SAIT is equipped with world-class R&D infrastructure such as supercomputers, aberration-corrected transmission electron microscopy (TEM), atom probe tomography (APT), femtosecond spectroscopy, hybrid secondary ion mass spectrometry (SIMS), hard X-ray photoelectron spectroscopy (HAXPES), and nano fab, to conduct research by performing modeling, simulation, experiment, and nanoscale analysis.

SAIT has also developed an organic material synthesis platform and a semiconductor material evaluation platform based on AI and robotics technology to reduce the time and cost required for material development. These technologies can be employed in a variety of fields and are expected to have a significant impact on future industrial development.

  • Aberration-Corrected Transmission Electron Microscopy (TEM)
  • Atom Probe Tomography (APT) - Invizo 6000
  • Atom Probe Tomography (APT) - Invizo 6000
  • Hybrid Secondary Ion Mass Spectrometry(SIMS)
  • Hard X-ray photoelectron spectroscopy (HAXPES)
  • AMS (Autonomous Material System) Platform
  • SEMEF (SEMiconductor processing-material's Evaluation & Formulation)
  • Aberration-Corrected Transmission Electron Microscopy (TEM)

    Analytical equipment enabling atomic scale imaging and spectroscopy using a double aberration corrector and monochromator

  • Atom Probe Tomography (APT) - Invizo 6000

    3D imaging and chemical composition measurements at the atomic scale
    (around 0.1-0.3nm resolution in depth and 0.3-0.5nm laterally)

  • Atom Probe Tomography (APT) - Invizo 6000

    Spectroscopic measurements of ultrafast electron behavior from femtoseconds to microseconds in semiconductors and electronic chemical compounds. Picture: Femtosecond pump-probe experiments on quantum dots in solution, measuring ultrafast exciton dynamics (blue: pump laser, rainbow: supercontinuum probe, red: photoluminescence from QDs).

  • Hybrid Secondary Ion Mass Spectrometry(SIMS)

    TOF-SIMS / Orbitrap Combination Instrument

  • Hard X-ray photoelectron spectroscopy (HAXPES)

    HAXPES analyzes the chemical and electronic structure of a surface by measuring the kinetic energy of the photoelectrons emitted through the photoelectric effect. Using high-energy X-rays from a Cr K-alpha source, the information depth is more than twice that of conventional XPS.

  • AMS (Autonomous Material System) Platform

    Autonomous organic material synthesis system based on AI and robotic technology

  • SEMEF (SEMiconductor processing-Material Evaluation & Formulation)

    Autonomous formulation and evaluation system based on AI and robotic technology