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Changing the World through Creative Research

Research Papers


SAIT proposed that dedegradation of blue-phosphorescent organic light-emitting devices involves exciton-induced generation of polaron pair within emitting layers. (Nature Communications, 2018)

X-Ray Detector

SAIT developed X-Ray detector material that enables large-area, low-dose X-ray imaging with low radiation exposure. (Nature, 2017)

Stretchable Transistor

SAIT identified fully stretchable optoelectronic sensors based on colloidal quantum dots for sensing photoplethysmographic signals. (Nature, 2017)


SAIT improved repeatable wafer-scale growth of single-crystal monolayer graphene on hydrogen-terminated germanium.
(Science, 2014)


SAIT developed separation membrane that can selectively control gas permeation using cross-layer thickness of graphene sheet. This will be available on new applications such as energy, environment. (Science, 2013)


SAIT improved several problems of ReRAM including current density, temperature stability, cycling endurance and distribution. (Nature Communications, 2013)

New Graphene transistor

Most recently, SAIT proposed and demonstrated a new logic device structure and published the results in the journal Science. According to the paper, the new graphene transistor opens up new opportunities in high speed transistor research. (Science, 2012)

GaN LED on Glass

SAIT succeeded in realizing GaN LEDs by cultivating nearly single-crystalline GaN on amorphous glass substrates. The GaN single-crystallinity on glass was enabled by introducing a thin layer of titanium. This technology is anticipated to serve as the basis in applying GaN LEDs to flat, large-sized back-light units or illumination systems. (Nature Photonics, 2011)