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Changing the World through Creative Research

Semiconductor Materials

Innovations in materials are crucial to extend and to overcome current Si-technologies. We have strived to search for new materials for channels and components.

Graphene/2-Dimensional Materials

crystalline material with a single layer of atoms

Overview Two-dimensional (2D) materials are ultrathin crystalline nanomaterials with a single layer of atoms with a high degree of anisotropy. There are only van der Waals interactions between the layers and no surface states or dangling bonds. Representative 2D materials include metallic graphene, semiconductor transition metal dichalcogenides (TMDs) and black phosphorus (BP), and insulating hexagonal boron nitride (h-BN).

Technology Trend 2D materials have been considered as one of the key materials for future electronic devices because of their unique properties. First, graphene exhibits extraordinary carrier mobility, flexibility, chemical inertness, and thermal conductivity. Thus, it has attracted attentions in various applications, such as high-performance transistors, flexible electronics, transparent electrodes, supercapacitors, and thermal interface materials. Second, TMDs with various band gap (0.3~4.0eV) can absorb light in a wide spectrum from the visible to the IR region. Therefore, these materials have been considered in optoelectronic applications, such as IR photodetectors, photoswitches, and light emitting diodes (LEDs). Heterostructural 2D materials can create new electrical and optical properties, such as superconductivity and support of exciton formation. Therefore, these materials are being considered in optoelectronic applications, such as IR photodetectors, optical switches, and light emitting diodes (LEDs).

SAIT Technology 2D materials research has been progressing in two directions. One is to improve the performance of conventional silicon devices. The size of transistor has been constantly reduced while improving performance and power consumption. We have confirmed the possibility of introducing graphene and h-BN as components of silicon devices to improve these properties. We expect to be able to control the interface, improve the manufacturing processes, and improve performance by reducing resistance. The other research directions are developing transistors beyond the 5-nm node for high integration / high performance / low power, and beyond-silicon devices for optoelectronic applications in the IR domain. In pursuit of these research directions, we are investigating a wide range of technologies, from waferscale 2D material growth and interface control to device fabrication and measurement.