Uniform Insulating Properties of Low- Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
Journal
IEEE ELECTR DEVICE L
Date
2018.11.09
Abstract
New organic gate dielectric materials composed of poly(hydroxy imide) (PHI) and 2,2‘-bis(4-(2-(vinyloxy)ethoxy)phenyl)propane (BPA-DEVE) that are cured at the low temperature of 130°C was developed with the purpose of manufacturing organic thin-film transistor (OTFT) arrays with high resolution on plastic substrates. Evaluation platform for confirming the uniform insulating properties of organic dielectric materials prior to actual application to OTFT arrays was proposed. This test method enabled verification of the suitability of the new dielectric material including chemical resistance during fabrication process. The cross-linked PHI was employed in conventional manufacturing process on polyethylene naphthalate (PEN) substrate and thiophene-thiazole based copolymer semiconductor was inkjet-printed on TFT arrays. In all processes, the temperature of the substrate kept below 130°C and 4.8 inch WQVGA electrophoretic display (EPD) panels on PEN substrate with the resolution of 98 dpi was successfully demonstrated.