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Origin of polarity-dependent VTH shift in amorphous chalcogenides for 3D self-selecting memory

Journal
Advanced Science
Date
2024.10.09
Abstract

Ovonic threshold switching (OTS) selector based on amorphous chalcogenides could be used to create 3D memory technology as a new emerging memory due to its self-selecting memory (SSM) behavior. Unfortunately, the elusive mechanism governing the memory writing operation limits their compositional and device optimization. Here, we investigate the mechanism behind the polarity-dependent threshold voltage shift (ΔVTH) by combining the theoretical and experimental analysis. By examining the physical principles of threshold switching and defect state analysis, it is validated that the ΔVTH as a memory window can be attributed to the charged defects dynamics and their gradient near electrodes, influenced by the non-uniform electric field after threshold switching. This contribution provides critical insights into the operational mechanism of OTS-based SSM referred to as selector-only memory, highlighting its advantages for high-density, low-cost, and energy-efficient memory technologies in the AI era.

Reference
Adv. Sci. 2024, 2408028
DOI
http://dx.doi.org/10.1002/advs.202408028