Sputtering effect on amorphous Ga-In-Zn-O thin-film surface:
Journal
Electrochemical and Solid-State Letters
Date
2010.09.30
Abstract
The chemical states of Ne+-ion-sputtered amorphous Ga-In-Zn-O
(a-GIZO) thin films
were investigated by high-resolution x-ray photoelectron
spectroscopy. The sputtering
reduced the Zn and In contents relative to that of Ga and
generated a subgap state above
the valence band maximum. Further sputtering resulted in
metallic states at the In3d and
In4d orbitals and at the Fermi energy edge, more so for the
lower-Zn- and In-content
film. Locally generated metallic In is suggested to
contribute to the metallic states.