Transfer-Free Growth of Graphene by Self-Assembled Monolayer
Journal
ADV MATER
Date
2011.09.30
Abstract
We report a transfer-free graphene growth by pyrolysis of
self-assembled monolayer (SAM) carbon materials squeezed
between top metal layer and bottom SiO2 substrate. The
graphene devices were directly fabricated on SiO2/Si
substrate by simply etching away the top metal layer. The
number of graphene layers was precisely controlled by
counting carbon atoms in the SAM materials, where the carbon
materials were well confined between metal and substrate
without being evaporated during high temperature pyrolysis.
Crystal quality and uniformity were well controlled by the
choice of the SAM material, in particular, aromatic SAM
turned out to yield better graphene quality than aliphatic
SAM. The graphene by this process indicated a high carrier
mobility of ~4400 cm2/Vs at an electron density of 2 x
1012 /cm2.