Modeling for Multilevel Switching of Oxide Bipolar RRAM
Journal
Nanotechnology
Date
2012.05.11
Abstract
We report a physical model for multilevel switching in oxide based bipolar resistive memory (ReRAM). To confirm validity of the model, we conduct experiments with tantalum oxide based ReRAM of which multi resistance levels are obtained by reset voltage modifications. It is also noticeable that in addition to multilevel switching capability, the ReRAM exhibits extremely different switching time scales, i.e., from 10-7sec order to 100sec order, with regard to reset voltages of only a few voltages difference which can be well explained by our model. It is demonstrated that with this simple model, multilevel switching behavior in oxide bipolar ReRAM can be described not only qualitatively but also quantitatively.