Modeling of a parameter to evaluate multilevel operation of bipolar oxide resistive device
Journal
IEEE T ELECTRON DEV
Date
2014.06.02
Abstract
We propose a simple and efficient model with a phenomenological fitting parameter to describe the vacancy dynamics that explain the changes in physical state and resistance of copper oxide resistive switching devices by analyzing current-voltage characteristics. The fitting parameter is the figure of merit for multi-bit operation capability of the oxide resistive switching devices. The understanding achieved through the model leads to realization of the necessary device performances including maximum on/off ratio and multi-resistance property.