Dispersion retrieval from multi-level ultra-deep reactive ion etched microstructures for terahertz slow-wave circuits
Journal
APPL PHYS LETT
Date
2014.01.16
Abstract
A multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation being retrieved by scattering parameter measurement. The measured return loss shows strong resonances above cuto with negligible phase shifts as compared with nite element analysis. The low aspect ratio con guration of the circuit by splitting up into multi levels alleviates the loading e ect of deep reactive ion etching on silicon wafers and enhances surface properties with high accuracy. The dispersion retrieved from the measurement, therefore, corresponds well to theoretical prediction. This result provides a straightforward way to realize precise determination of wave dispersion in terahertz vacuum electronics.