Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
Journal
IEEE ELECTR DEVICE L
Date
2013.10.30
Abstract
This work studies the current collapse in p-GaN gate AlGaN/GaN HEMTs, focusing on the current collapse caused by the transient state during switching. It is found that channel hot electrons play a significant role in increasing current collapse, and that adding a field plate significantly reduces the effect. By stressing the device with off-state pulses of 100 × 10 μs and a VGS rise/fall time of 10 ns at VDC = 400 V, the on-resistance was 78 times larger after stress without field plates, while with a field plate, it was only 1.8 times larger.
Reference
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 12, DECEMBER 2013