Barrier Height at the Graphene and Carbon Nanotube Junction
Journal
IEEE T ELECTRON DEV
Date
2014.06.02
Abstract
Graphene/carbon nanotube (CNT) junction barrier height was investigated by using all-carbon field effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the pre-patterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.
Reference
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 6, JUNE 2014