Step-by-Step Implementation of Amplifier Circuit with Graphene Field-Effect Transistor on Printed-Circuit Board
Journal
CAP(Current Applied Physics)
Date
2014.06.10
Abstract
Power amplifier circuits are implemented with graphene-field-effect transistors, capacitors and inductors, and their gain is improved step by step by adjusting the capacitors and the inductors. The transistors were fabricated on the 150-mm wafer using conventional complementary-metal-oxide semiconductor processing along with graphene transferring processes. The completed circuit was implemented on a printed circuit board which allowed for adjustment of the external capacitance and inductance to study the performance of graphene RF FETs. Achieved is the maximum signal gain of 1.3 dB at 380 MHz. Device parameters of the transistors were then extracted and the gain was analyzed, resulting in how to realize high performance circuits: lowering source-drain conductance and gate resistance.