Auger Electron Nano Mapping and X-ray Photoelectron Spectroscopy Combined with Gas Cluster Ion Beam Sputtering to Study an Organic Bulk Heterojunction
Journal
APPL PHYS LETT
Date
2014.06.20
Abstract
The lateral and vertical distributions of organic p/n bulk heterojunction for an organic solar cell device are investigated using nanometer-scale Auger electron mapping and X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering, respectively. The concentration of sulfur elements, included only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, the considerable change of the sulfur element atomic concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur elements reveals the lateral 2-dimensional distribution of p-type and n-type materials. Consequently, the combination of Auger electron mapping with Ar GCIB sputtering would allow of constructing the 3-dimensional distribution of p-type and n-type materials in organic photovoltaic cell.