Samsung Advanced Institute of Technology

For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials and reliable integration into devices. Here, the high-throughput growth, completed in 12 minutes, of 6-inch wafer-scale monolayer MoS₂ and WS₂ is reported, which is directly compatible with scalable batch processing and device integration. Specifically, a pulsed metal？organic chemical vapor deposition process is developed, where periodic interruption of the precursor supply drives vertical Ostwald ripening that prevents secondary nucleation despite high precursor concentrations. The as-grown TMD films show excellent spatial homogeneity and well-stitched grain boundaries, enabling facile transfer to various target substrates without degradation. Using these films, batch fabrication of high-performance field-effect transistor arrays in wafer scale is demonstrated, and the FETs show remarkable uniformity. The high-throughput production and wafer-scale automatable transfer will facilitate the integration of TMDs into Si-complementary metal？oxide？semiconductor (CMOS) platforms.