CsPbBr3/CH3NH3PbCl3 Double-layer Enhances Efficiency and Lifetime of Perovskite Light Emitting Diode
Journal
ACS Energy Letters
Date
2020.06.05
Abstract
Perovskite light emission have been limited due to their ambient-sensitive nature originated from surface and grain boundary defects. Here, we present a new strategy to passivate interfacial defects by double perovskite film formation. The bottom film (methylammonium lead chloride) successfully transport holes to the upper formed cesium lead bromide emitter without hole-transporting organics. The emitting CsPbBr3 polycrystalline films are conformally deposited on the CH3NH2PbCl3 by a dynamic spin casting method. Improved luminescence properties are achieved from such formed double layers without additional driving voltage increase. Enhanced crystallinity and prolonged photoluminescence by exploiting interfacial defect passivation and strain-induced effect in the hetero-structure are enabling factors. Our approach could further make high performance perovskite light-emitting diode and may also be extended to other perovskite devices.