Changes in chemical and structural properties of phase-change material GeTe with nitrogen doping and annealing
Journal
japanese journal of applied physics(jjap)
Date
2010.09.27
Abstract
In this study, changes in the chemical, structural, and
electrical properties of undoped and 8.4 at％ nitrogen-doped
GeTe films were investigated. The transition temperature of
sheet resistance increased due to nitrogen doping, which
corresponded well with phase transformations. The shift of
chemical potential toward lower binding energies strongly
depended on crystallization. The Ge/Te ratio showed a
tendency to increase with approaching the surface only for
undoped GeTe. Nitrogen doping may suppress the instability of
GeTe.