Changing the World through
Creative Research

Research Infra

SAIT is equipped with world class R&D infrastructures such as high performance computing (HPC) clusters using grid technology, electron-beam lithography (EBL) system, ultra low temperature scanning probe microscopy (ULT-SPM) facility, insitu spectro-electrochemical system coupled with scanning probe microscopy (ISESPM), transmission electron microscopy (TEM), nano fab, etc. to conduct research by performing modeling, simulation, experiment, and nanoscale analysis.

Aberration-Corrected Transmission Electron Microscopy (TEM)
Analytical equipment enabling atomic scale imaging and spectroscopy using double-aberration-corrector and monochromator
High performance computing system for CAE and artificial intelligence research
In-situ microscopy/spectroscopy
Analytical methodology wherein the microscopic/spectroscopic
 characterization of materials is coupled simultaneously with the state of device under operation
E-beam lithography
E-beam lithography enabling sub 10 nano patterning
8" Nano Fab
Versatile R&D fab enabling Si and Non-Si processes