We report the integration of SrRuO3, one of the most widely used oxide electrode materials
in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an
SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half
maximum of 0.01°, a resistivity at room temperature of 250 μΩ？cm, a residual resistivity
ratio (？？？？？？？？ ？？/？？？？ ？？) of 11, and a paramagnetic-to-ferromagnetic transition temperature of
~160 K. These structural, electrical, and magnetic properties compare favorably to the best
reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films
produced directly on SrTiO3 single crystals by most thin film growth techniques. These high
quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multifunctional
oxides with the workhorse of semiconductor technology, silicon.