Phase-change characteristics and crystal structure in multi-stacked GeTe/InTe films
Journal
japanese journal of applied physics(jjap)
Date
2011.10.20
Abstract
The microstructural and electrical-property changes of multi-
stacked GeTe/InTe layers were investigated. When the GeTe
layer was thicker than the InTe layer, the Ge(In)Te phase was
only occurred after annealing. Though the crystallization
should be started from the GeTe layers, there was uniform
distribution of Ge and In atoms in the Ge(In)Te phase after
400oC annealing. The dropping temperature of sheet
resistances was slightly increased with the decrease of GeTe
thickness. If the GeTe layer was thinner than InTe layer, the
observed phases with annealing were not only Ge(In)Te phase
but also In7Te10 phase. The formation of In7Te10 phase was
main origin of increase in sheet resistances after
crystallization by subsequent annealing.