High Performance Foldable Polymer Thin Film Transistors with a Side Gate Architecture

Abstract: We have demonstrated highly flexible and foldable polymer thin film transistors gated by ion gel layer. Utilizing the diffusion of the crosslinkable oligomers in the P3HT thin films followed by UV gelation, the patterned ion gel had strong adhesion to the P3HT layer. The device stability and reproducibility have been greatly improved by applying a side gate electrode instead of bottom or top gate. The side gate structure is a unique character of ion gel dielectric transistors. It made the device structure simple, which is advantageous in printing process. Due to the embedded metal electrodes between the channel layer and the ion gel layer in addition to the deformable nature of the ion gel dielectric, the transistor arrays were electrically stable at repeated folding events.

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