The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

Abstract: We investigated the low-frequency noise (LFN) characteristics in passivated InZnO (IZO) thin-film transistors (TFTs) with various active layer thicknesses. These measured LFNs are well matched to the mobility fluctuation model. According to this model, the Hooge’s constant (αH) is significantly increased as the active layer thickness is decreased. By plotting the αH with the field effect mobility (μeff), we found that the αH is proportional to the μeff-1. This indicates that the mobility fluctuation by the impurity scattering in the channel region is significantly increased as the active layer thickness is decreased, and that is the main origin of the LFN increments in the thinner active-layer-thickness devices.

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