Metal Oxide Photo-Thin Film Transistor for Futuristic Interactive Display
Journal
ADV MATER
Date
2012.04.13
Abstract
In our investigation, we have fabricated and compared thin film devices in which the active structure for a control sample is comprised of the most common active material such as amorphous silicon (a-Si) and the other structure is composed of amorphous metal oxide (a-MeO) semiconductor, both in conventional bottom-gate TFT configuration, which affords effective platforms to address the photo-sensitivity of phototransistor for the incoming light and the beneficial process/structural compatibility with active matrix display panel. As compared to a-Si-based photo-TFT, a-MeO photo-TFT improves the photocurrent under the light illumination as well as the transistor on current (Ion) under the dark state by virtue of its high mobility, which are suitable for ultimately producing the possibility for large area (>70inch) interactive display without restrictions due to low photo sensing margin and transistor current. The active structure of a-MeO photo-TFT is composed of double layer, GaInZnO (GIZO) and InZnO (IZO), each of which plays its unique role in functioning photo-TFT. The bi-layer a-MeO photo-TFT shows high photocurrent, responsivitiy, EQE, and high endurance. In addition, we discuss the comparative study in terms of circuitry, large area adaptability, and aperture ratio as compared a-Si-based photo-sensor array.