Improvement in the device performance of In-Sn-O transistor by oxygen high pressure annealing at 150℃
Journal
APPL PHYS LETT
Date
2012.04.19
Abstract
This study examined the effect of oxygen (O2) high pressure annealing (HPA) on indium-tin-oxide (ITO) thin film transistors (TFTs). The HPA-treated TFT at 150C exhibited a high saturation mobility (μSAT), low subthreshold gate swing (SS), threshold voltage and Ion/off of 25.8 cm2/Vs, 0.14 V/decade, 0.6V and 2E8, respectively. In contrast, the ambient-annealed device suffered from a lower μSAT and high SS value of 5.2cm2/Vs and 0.58V/decade, respectively. This improvement can be attributed to the decreased concentration of oxygen vacancy defects in the ITO channel layer during the effective O2 HPA treatment, which also resulted in smaller hysteresis and less degradation of the drain current under positive bias stress conditions.