Local micron-scale crystallization of amorphous LaB6 film yielding strong, compact thermionic electron emission source
Journal
IEEE ELECTR DEVICE L
Date
2013.10.01
Abstract
Local micro-heating of amorphous LaB6 film could control the degree of crystallization,
as determined by spatially-resolved Raman spectroscopy and transmission electron
microscopy. With full crystallization of the LaB6, we achieved micron-sized thermionic
electron emission source with the maximum current density of 1.2 A/cm2. The
advantage of fabricating the micron-sized thermionic emitter with high-current density
enables versatile application such as compact X-ray or vacuum type terahertz electron
sources. A new structure of micron-sized, lateral-type vacuum channel transistor is
proposed based on the simulation. The calculated electron travelling time from emitter
to collector was 8.3 ps at the distance of ~3 um, meaning that operation frequency could be
120 GHz level.
Reference
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 10, OCTOBER 2013