1-nm-thick epitaxial AlN passivation for highly efficient, ultra-high density flexible InGaN micro-LED displays

Journal
Nature Communications
Date
2025.07.01
Abstract

 Highly efficient, ultrahigh-density (UHD) inorganic micro-LED (μ-LED) displays are gaining a strong position in the market for use in augmented reality (AR) glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the μ-LED displays could evolve into next generation AR viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN μ-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the UHD display was achieved through the development of a near-complete device transfer of the monolithic μ-LED assembly. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic 5,000 ppi μ-LED displays, we believe this will pave the way for another revolution in the AR and metaverse industries.

 

 

Reference
Nat Commun 16, 5607 (2025)
DOI
http://dx.doi.org/10.1038/s41467-025-60886-z