Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells
Journal
OPT EXPRESS
Date
2014.04.11
Abstract
We discuss the influence of V-pit barrier energy, originating from its facets of ( ) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation, based on the self-consistent k？p method reveals that higher V-pit potential barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing their internal quantum efficiency (IQE).
Reference
Optics Express, Vol. 22, Issue S3, pp. A857-A866 (2014)
